ksh122 / ksh122i ? npn silicon darlington transistor ? 2002 fairchild semiconductor corporation www.fairchildsemi.com ksh122 / ksh122i rev. 1.1.0 1 november 2013 ksh122 / ksh122i npn silicon darlington transistor features ? d-pak for surface mount applications ? high dc current gain ? built-in damper diode at e-c ? lead formed for surface mount applications (no suffix) ? straight lead (i-pak, ? - i ? suffix) ? electrically similar to popular tip122 ? complement to ksh127 applications ? switching regulators ? converters ? power amplifiers ordering information part number top mark package packing method ksh122tf ksh122 to-252 3l (dpak) tape and reel KSH122TM ksh122 to-252 3l (dpak) tape and reel ksh122itu ksh122-i to-251 3l (ipak) rail description designed for general-purpose power and switching, such as output or driver stages in applications. 1.base 2.collector 3.emitter d-pak i-pak 11 equivalent circuit b e c r1 r2 3 l ? 3 l ?
ksh122 / ksh122i ? npn silicon darlington transistor ? 2002 fairchild semiconductor corporation www.fairchildsemi.com ksh122 / ksh122i rev. 1.1.0 2 absolute maximum ratings stresses exceeding the absolute maximum ratings may damage the device. the device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. in addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. values are at t c = 25c unless otherwise noted. electrical characteristics values are at t c = 25c unless otherwise noted. note: 1. pulse test: pw 300 s, duty cycle 2%. symbol parameter value unit v cbo collector-base voltage 100 v v ceo collector-emitter voltage 100 v v ebo emitter-base voltage 5 v i c collector current (dc) 8 a i cp collector current (pulse) 16 a i b base current 120 ma p c collector dissipation (t c =25 c) 20.00 w collector dissipation (t a =25 c) 1.75 t j junction temperature 150 c t stg storage temperature - 65 to 150 c symbol parameter conditions min. typ. max. unit v ceo (sus) collector-emitter sustaining voltage (1) i c = 30 ma, i b = 0 100 v i ceo collector cut-off current v ce = 50 v, i b =0 10 a i cbo collector cut-off current v cb = 100 v, i e = 0 10 a i ebo emitter cut-off current v eb = 5 v, i c = 0 2 ma h fe dc current gain (1) v ce = 4 v, i c = 4 a 1000 12000 v ce = 4 v, v eb = 8 a 100 v ce (sat) collector-emitter saturation voltage (1) i c = 4 a, i b = 16 ma 2 v i c = 8 a, i b = 80 ma 4 v be (sat) base-emitter saturation voltage (1) i c = 8 a, i b = 80 ma 4.5 v v be (on) base-emitter on voltage (1) v ce = 4 v, i c = 4 a 2.8 v c ob output capacitance v cb = 10 v, i e = 0, f = 0.1 mhz 200 pf
ksh122 / ksh122i ? npn silicon darlington transistor ? 2002 fairchild semiconductor corporation www.fairchildsemi.com ksh122 / ksh122i rev. 1.1.0 3 typical performance characteristics figure 1. dc current gain figure 2. base-emitter saturation voltage collector-emitter saturation voltage figure 3. collector output capacitance figure 4. turn-on time figure 5. turn-off time figure 6. safe operating area 0.1 1 10 100 1k 10k v ce = 4v h fe , dc current gain i c [a], collector current 0.1 1 10 100 0.01 0.1 1 10 i c = 250 i b v ce (sat) v be (sat) v be (sat), v ce (sat)[v], saturation voltage i c [a], collector current 0.1 1 10 100 1 10 100 1000 c ob [pf], capacitance v cb [v], collector-base voltage 0.1 1 10 0.01 0.1 1 10 v cc = 30v i c =250i b i b1 =-i b2 t d , v be (off)=0 t r t r ,t d [ s], turn on time i c [a], collector current 0.1 1 10 0.1 1 10 v cc =30v i c =250i b t f t stg t stg ,t f [ s], turn off time i c [a], collector current 1 10 100 1000 0.01 0.1 1 10 100 5 0 0 s 5 m s 1 0 0 s 1 m s d c i c [a], collector current v ce [v], collector-emitter voltage
ksh122 / ksh122i ? npn silicon darlington transistor ? 2002 fairchild semiconductor corporation www.fairchildsemi.com ksh122 / ksh122i rev. 1.1.0 4 typical performance characteristics (continued) figure 7. power derating 0 25 50 75 100 125 150 175 0 5 10 15 20 25 p c [w], power dissipation t c [ o c], case temperature
ksh122 / ksh122i ? npn silicon darlington transistor ? 2002 fairchild semiconductor corporation www.fairchildsemi.com ksh122 / ksh122i rev. 1.1.0 5 physical dimensions figure 7. 3-lead, to-252, jedec to-252 var. ab, surface mount (dpak) (active) package drawings are provided as a service to customers considering fairchild components. drawings may change in any manner without notice. please note the revision and/or date on the drawing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/to/to252d03.pdf . for current tape and reel specifications, visit fairchild semiconductor?s online packaging area: http://www.fairchildsemi.com/packing_dwg/pkg-to252d03.pdf . to-252 3l
ksh122 / ksh122i ? npn silicon darlington transistor ? 2002 fairchild semiconductor corporation www.fairchildsemi.com ksh122 / ksh122i rev. 1.1.0 6 physical dimensions (continued) figure 8. to-251 (ipak) molded, 3-lead (active) package drawings are provided as a service to customers considering fairchild components. drawings may change in any manner without notice. please note the revision and/or date on the drawing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/to/to251a03.pdf . for current tape and reel specifications, visit fairchild semiconductor?s online packaging area: http://www.fairchildsemi.com/packing_dwg/pkg-to251a03.pdf . to-251 3l d) to251a03reva.
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